IPB45N04S4L-08 by Infineon Technologies – Specifications

Infineon Technologies IPB45N04S4L-08 is a IPB45N04S4L-08 from Infineon Technologies, part of the MOSFETs. It is designed for 40V 45A 7.9mΩ@45A,10V 45W 2.2V@17uA 1PCSNChannel TO-263-3 MOSFETs ROHS. This product comes in a TO-263-3 package and is sold as Bag-packed. Key features include:

• Drain Source Voltage (Vdss): 40V
• Continuous Drain Current (Id): 45A
• Drain Source On Resistance (RDS(on)@Vgs,Id): 7.9mΩ@45A,10V
• Power Dissipation (Pd): 45W
• Gate Threshold Voltage (Vgs(th)@Id): 2.2V@17uA
• Type: 1PCSNChannel
• Input Capacitance (Ciss@Vds): 2.34nF@25V
• Total Gate Charge (Qg@Vgs): 30nC@10V
• Operating Temperature: -55℃~+175℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.