IPB45N06S4L08ATMA3 by Infineon Technologies – Specifications

Infineon Technologies IPB45N06S4L08ATMA3 is a IPB45N06S4L08ATMA3 from Infineon Technologies, part of the MOSFETs. It is designed for 60V 45A 7.9mΩ@45A,10V 71W 2.2V@35uA 1PCSNChannel TO-263-3 MOSFETs ROHS. This product comes in a TO-263-3 package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 60V
  • Continuous Drain Current (Id): 45A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 7.9mΩ@45A,10V
  • Power Dissipation (Pd): 71W
  • Gate Threshold Voltage (Vgs(th)@Id): 2.2V@35uA
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): 4.78nF@25V
  • Total Gate Charge (Qg@Vgs): 64nC@10V
  • Operating Temperature: -55℃~+175℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 2 grams.

More on IPB45N06S4L08ATMA3

Full Specifications of IPB45N06S4L08ATMA3

Model NumberIPB45N06S4L08ATMA3
Model NameInfineon Technologies IPB45N06S4L08ATMA3
CategoryMOSFETs
BrandInfineon Technologies
Description60V 45A 7.9mΩ@45A,10V 71W 2.2V@35uA 1PCSNChannel TO-263-3 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:2.000 grams / 0.070548 oz
Package / CaseTO-263-3
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)60V
Continuous Drain Current (Id)45A
Drain Source On Resistance (RDS(on)@Vgs,Id)7.9mΩ@45A,10V
Power Dissipation (Pd)71W
Gate Threshold Voltage (Vgs(th)@Id)2.2V@35uA
Type1PCSNChannel
Input Capacitance (Ciss@Vds)4.78nF@25V
Total Gate Charge (Qg@Vgs)64nC@10V
Operating Temperature-55℃~+175℃@(Tj)

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