IPB45P03P4L11ATMA1 by Infineon Technologies – Specifications

Infineon Technologies IPB45P03P4L11ATMA1 is a IPB45P03P4L11ATMA1 from Infineon Technologies, part of the MOSFETs. It is designed for 30V 45A 58W 10.8mΩ@45A,10V 2V@85uA 1PCSPChannel TO-263 MOSFETs ROHS. This product comes in a TO-263 package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 30V
  • Continuous Drain Current (Id): 45A
  • Power Dissipation (Pd): 58W
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 10.8mΩ@45A,10V
  • Gate Threshold Voltage (Vgs(th)@Id): 2V@85uA
  • Type: 1PCSPChannel
  • Input Capacitance (Ciss@Vds): 3.77nF@25V
  • Total Gate Charge (Qg@Vgs): 55nC@10V
  • Operating Temperature: -55℃~+175℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.

More on IPB45P03P4L11ATMA1

Full Specifications of IPB45P03P4L11ATMA1

Model NumberIPB45P03P4L11ATMA1
Model NameInfineon Technologies IPB45P03P4L11ATMA1
CategoryMOSFETs
BrandInfineon Technologies
Description30V 45A 58W 10.8mΩ@45A,10V 2V@85uA 1PCSPChannel TO-263 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:1.000 grams / 0.035274 oz
Package / CaseTO-263
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)30V
Continuous Drain Current (Id)45A
Power Dissipation (Pd)58W
Drain Source On Resistance (RDS(on)@Vgs,Id)10.8mΩ@45A,10V
Gate Threshold Voltage (Vgs(th)@Id)2V@85uA
Type1PCSPChannel
Input Capacitance (Ciss@Vds)3.77nF@25V
Total Gate Charge (Qg@Vgs)55nC@10V
Operating Temperature-55℃~+175℃@(Tj)

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