IPB50R199CP by Infineon Technologies – Specifications

Infineon Technologies IPB50R199CP is a IPB50R199CP from Infineon Technologies, part of the MOSFETs. It is designed for 550V 17A 139W 199mΩ@10V,9.9A 3.5V@660uA 1PCSNChannel TO-263-3 MOSFETs ROHS. This product comes in a TO-263-3 package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 550V
  • Continuous Drain Current (Id): 17A
  • Power Dissipation (Pd): 139W
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 199mΩ@10V,9.9A
  • Gate Threshold Voltage (Vgs(th)@Id): 3.5V@660uA
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): 1.8nF@100V
  • Total Gate Charge (Qg@Vgs): 45nC@10V
  • Operating Temperature: -55℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.

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Full Specifications of IPB50R199CP

Model NumberIPB50R199CP
Model NameInfineon Technologies IPB50R199CP
CategoryMOSFETs
BrandInfineon Technologies
Description550V 17A 139W 199mΩ@10V,9.9A 3.5V@660uA 1PCSNChannel TO-263-3 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:1.000 grams / 0.035274 oz
Package / CaseTO-263-3
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)550V
Continuous Drain Current (Id)17A
Power Dissipation (Pd)139W
Drain Source On Resistance (RDS(on)@Vgs,Id)199mΩ@10V,9.9A
Gate Threshold Voltage (Vgs(th)@Id)3.5V@660uA
Type1PCSNChannel
Input Capacitance (Ciss@Vds)1.8nF@100V
Total Gate Charge (Qg@Vgs)45nC@10V
Operating Temperature-55℃~+150℃@(Tj)

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