IPB600N25N3 G by Infineon Technologies – Specifications

Infineon Technologies IPB600N25N3 G is a IPB600N25N3 G from Infineon Technologies, part of the MOSFETs. It is designed for 250V 25A 60mΩ@10V,25A 136W 4V@90uA 1PCSNChannel TO-263-3 MOSFETs ROHS. This product comes in a TO-263-3 package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 250V
  • Continuous Drain Current (Id): 25A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 60mΩ@10V,25A
  • Power Dissipation (Pd): 136W
  • Gate Threshold Voltage (Vgs(th)@Id): 4V@90uA
  • Type: 1PCSNChannel

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1.64 grams.

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Full Specifications of IPB600N25N3 G

Model NumberIPB600N25N3 G
Model NameInfineon Technologies IPB600N25N3 G
CategoryMOSFETs
BrandInfineon Technologies
Description250V 25A 60mΩ@10V,25A 136W 4V@90uA 1PCSNChannel TO-263-3 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:1.640 grams / 0.057849 oz
Package / CaseTO-263-3
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCN-
Drain Source Voltage (Vdss)250V
Continuous Drain Current (Id)25A
Drain Source On Resistance (RDS(on)@Vgs,Id)60mΩ@10V,25A
Power Dissipation (Pd)136W
Gate Threshold Voltage (Vgs(th)@Id)4V@90uA
Type1PCSNChannel

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