Infineon Technologies IPB60R055CFD7 is a IPB60R055CFD7 from Infineon Technologies, part of the MOSFETs. It is designed for 600V 38A 46mΩ@10V,18A 178W 4V@900uA 1PCSNChannel TO-263-3 MOSFETs ROHS. This product comes in a TO-263-3 package and is sold as Tape & Reel (TR). Key features include:
- Drain Source Voltage (Vdss): 600V
- Continuous Drain Current (Id): 38A
- Drain Source On Resistance (RDS(on)@Vgs,Id): 46mΩ@10V,18A
- Power Dissipation (Pd): 178W
- Gate Threshold Voltage (Vgs(th)@Id): 4V@900uA
- Type: 1PCSNChannel
- Input Capacitance (Ciss@Vds): 3.194nF@400V
- Total Gate Charge (Qg@Vgs): 79nC@0~10V
- Operating Temperature: -55℃~+150℃@(Tj)
Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.
More on IPB60R055CFD7
Full Specifications of IPB60R055CFD7
Model Number | IPB60R055CFD7 |
Model Name | Infineon Technologies IPB60R055CFD7 |
Category | MOSFETs |
Brand | Infineon Technologies |
Description | 600V 38A 46mΩ@10V,18A 178W 4V@900uA 1PCSNChannel TO-263-3 MOSFETs ROHS |
RoHS | Lead free / RoHS Compliant |
Unit | Piece |
Weight: | 1.000 grams / 0.035274 oz |
Package / Case | TO-263-3 |
Package / Arrange | Tape & Reel (TR) |
Battery | No |
ECCN | - |
Drain Source Voltage (Vdss) | 600V |
Continuous Drain Current (Id) | 38A |
Drain Source On Resistance (RDS(on)@Vgs,Id) | 46mΩ@10V,18A |
Power Dissipation (Pd) | 178W |
Gate Threshold Voltage (Vgs(th)@Id) | 4V@900uA |
Reverse Transfer Capacitance (Crss@Vds) | - |
Type | 1PCSNChannel |
Input Capacitance (Ciss@Vds) | 3.194nF@400V |
Total Gate Charge (Qg@Vgs) | 79nC@0~10V |
Operating Temperature | -55℃~+150℃@(Tj) |
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