IPB60R105CFD7 by Infineon Technologies – Specifications

Infineon Technologies IPB60R105CFD7 is a IPB60R105CFD7 from Infineon Technologies, part of the MOSFETs. It is designed for 650V 21A 89mΩ@10V,9.3A 106W 4V@470uA 1PCSNChannel TO-263-3 MOSFETs ROHS. This product comes in a TO-263-3 package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 650V
  • Continuous Drain Current (Id): 21A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 89mΩ@10V,9.3A
  • Power Dissipation (Pd): 106W
  • Gate Threshold Voltage (Vgs(th)@Id): 4V@470uA
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): 1.752nF@400V
  • Total Gate Charge (Qg@Vgs): 42nC@0~10V
  • Operating Temperature: -55℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.

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Full Specifications of IPB60R105CFD7

Model NumberIPB60R105CFD7
Model NameInfineon Technologies IPB60R105CFD7
CategoryMOSFETs
BrandInfineon Technologies
Description650V 21A 89mΩ@10V,9.3A 106W 4V@470uA 1PCSNChannel TO-263-3 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:1.000 grams / 0.035274 oz
Package / CaseTO-263-3
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCN-
Drain Source Voltage (Vdss)650V
Continuous Drain Current (Id)21A
Drain Source On Resistance (RDS(on)@Vgs,Id)89mΩ@10V,9.3A
Power Dissipation (Pd)106W
Gate Threshold Voltage (Vgs(th)@Id)4V@470uA
Reverse Transfer Capacitance (Crss@Vds)-
Type1PCSNChannel
Input Capacitance (Ciss@Vds)1.752nF@400V
Total Gate Charge (Qg@Vgs)42nC@0~10V
Operating Temperature-55℃~+150℃@(Tj)

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