Infineon Technologies IPB60R145CFD7 is a IPB60R145CFD7 from Infineon Technologies, part of the MOSFETs. It is designed for 650V 16A 127mΩ@10V,6.8A 83W 4V@340uA 1PCSNChannel TO-263-3 MOSFETs ROHS. This product comes in a TO-263-3 package and is sold as Tape & Reel (TR). Key features include:
- Drain Source Voltage (Vdss): 650V
- Continuous Drain Current (Id): 16A
- Drain Source On Resistance (RDS(on)@Vgs,Id): 127mΩ@10V,6.8A
- Power Dissipation (Pd): 83W
- Gate Threshold Voltage (Vgs(th)@Id): 4V@340uA
- Type: 1PCSNChannel
- Input Capacitance (Ciss@Vds): 1.33nF@400V
- Total Gate Charge (Qg@Vgs): 31nC@0~10V
- Operating Temperature: -55℃~+150℃@(Tj)
Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.
More on IPB60R145CFD7
Full Specifications of IPB60R145CFD7
Model Number | IPB60R145CFD7 |
Model Name | Infineon Technologies IPB60R145CFD7 |
Category | MOSFETs |
Brand | Infineon Technologies |
Description | 650V 16A 127mΩ@10V,6.8A 83W 4V@340uA 1PCSNChannel TO-263-3 MOSFETs ROHS |
RoHS | Lead free / RoHS Compliant |
Unit | Piece |
Weight: | 1.000 grams / 0.035274 oz |
Package / Case | TO-263-3 |
Package / Arrange | Tape & Reel (TR) |
Battery | No |
ECCN | - |
Drain Source Voltage (Vdss) | 650V |
Continuous Drain Current (Id) | 16A |
Drain Source On Resistance (RDS(on)@Vgs,Id) | 127mΩ@10V,6.8A |
Power Dissipation (Pd) | 83W |
Gate Threshold Voltage (Vgs(th)@Id) | 4V@340uA |
Reverse Transfer Capacitance (Crss@Vds) | - |
Type | 1PCSNChannel |
Input Capacitance (Ciss@Vds) | 1.33nF@400V |
Total Gate Charge (Qg@Vgs) | 31nC@0~10V |
Operating Temperature | -55℃~+150℃@(Tj) |
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