IPB60R165CPATMA1 by Infineon Technologies – Specifications

Infineon Technologies IPB60R165CPATMA1 is a IPB60R165CPATMA1 from Infineon Technologies, part of the MOSFETs. It is designed for 600V 21A 192W 165mΩ@12A,10V 3.5V@790uA 1PCSNChannel TO-263 MOSFETs ROHS. This product comes in a TO-263 package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 600V
  • Continuous Drain Current (Id): 21A
  • Power Dissipation (Pd): 192W
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 165mΩ@12A,10V
  • Gate Threshold Voltage (Vgs(th)@Id): 3.5V@790uA
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): 2nF@100V
  • Total Gate Charge (Qg@Vgs): 52nC@10V
  • Operating Temperature: -55℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.

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Full Specifications of IPB60R165CPATMA1

Model NumberIPB60R165CPATMA1
Model NameInfineon Technologies IPB60R165CPATMA1
CategoryMOSFETs
BrandInfineon Technologies
Description600V 21A 192W 165mΩ@12A,10V 3.5V@790uA 1PCSNChannel TO-263 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:1.000 grams / 0.035274 oz
Package / CaseTO-263
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)600V
Continuous Drain Current (Id)21A
Power Dissipation (Pd)192W
Drain Source On Resistance (RDS(on)@Vgs,Id)165mΩ@12A,10V
Gate Threshold Voltage (Vgs(th)@Id)3.5V@790uA
Type1PCSNChannel
Input Capacitance (Ciss@Vds)2nF@100V
Total Gate Charge (Qg@Vgs)52nC@10V
Operating Temperature-55℃~+150℃@(Tj)

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