IPB60R180P7 by Infineon Technologies – Specifications

Infineon Technologies IPB60R180P7 is a IPB60R180P7 from Infineon Technologies, part of the MOSFETs. It is designed for 650V 18A 146mΩ@10V,5.6A 72W 3.5V@280uA 1PCSNChannel TO-263-3 MOSFETs ROHS. This product comes in a TO-263-3 package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 650V
  • Continuous Drain Current (Id): 18A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 146mΩ@10V,5.6A
  • Power Dissipation (Pd): 72W
  • Gate Threshold Voltage (Vgs(th)@Id): 3.5V@280uA
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): 1.081nF@400V
  • Total Gate Charge (Qg@Vgs): 25nC@0~10V
  • Operating Temperature: -55℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1.642 grams.

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Full Specifications of IPB60R180P7

Model NumberIPB60R180P7
Model NameInfineon Technologies IPB60R180P7
CategoryMOSFETs
BrandInfineon Technologies
Description650V 18A 146mΩ@10V,5.6A 72W 3.5V@280uA 1PCSNChannel TO-263-3 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:1.642 grams / 0.05792 oz
Package / CaseTO-263-3
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)650V
Continuous Drain Current (Id)18A
Drain Source On Resistance (RDS(on)@Vgs,Id)146mΩ@10V,5.6A
Power Dissipation (Pd)72W
Gate Threshold Voltage (Vgs(th)@Id)3.5V@280uA
Reverse Transfer Capacitance (Crss@Vds)-
Type1PCSNChannel
Input Capacitance (Ciss@Vds)1.081nF@400V
Total Gate Charge (Qg@Vgs)25nC@0~10V
Operating Temperature-55℃~+150℃@(Tj)

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