IPB60R380C6ATMA1 by Infineon Technologies – Specifications

Infineon Technologies IPB60R380C6ATMA1 is a IPB60R380C6ATMA1 from Infineon Technologies, part of the MOSFETs. It is designed for 600V 10.6A 380mΩ@3.8A,10V 83W 3.5V@320uA 1PCSNChannel TO-263-3 MOSFETs ROHS. This product comes in a TO-263-3 package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 600V
  • Continuous Drain Current (Id): 10.6A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 380mΩ@3.8A,10V
  • Power Dissipation (Pd): 83W
  • Gate Threshold Voltage (Vgs(th)@Id): 3.5V@320uA
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): 700pF@100V
  • Total Gate Charge (Qg@Vgs): 32nC@10V
  • Operating Temperature: -55℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.

More on IPB60R380C6ATMA1

Full Specifications of IPB60R380C6ATMA1

Model NumberIPB60R380C6ATMA1
Model NameInfineon Technologies IPB60R380C6ATMA1
CategoryMOSFETs
BrandInfineon Technologies
Description600V 10.6A 380mΩ@3.8A,10V 83W 3.5V@320uA 1PCSNChannel TO-263-3 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:1.000 grams / 0.035274 oz
Package / CaseTO-263-3
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)600V
Continuous Drain Current (Id)10.6A
Drain Source On Resistance (RDS(on)@Vgs,Id)380mΩ@3.8A,10V
Power Dissipation (Pd)83W
Gate Threshold Voltage (Vgs(th)@Id)3.5V@320uA
Type1PCSNChannel
Input Capacitance (Ciss@Vds)700pF@100V
Total Gate Charge (Qg@Vgs)32nC@10V
Operating Temperature-55℃~+150℃@(Tj)

Compare Infineon Technologies - IPB60R380C6ATMA1 With Other 200 Models

Related Models - IPB60R380C6ATMA1 Alternative

Scroll to Top