IPB64N25S3-20 by Infineon Technologies – Specifications

Infineon Technologies IPB64N25S3-20 is a IPB64N25S3-20 from Infineon Technologies, part of the MOSFETs. It is designed for 250V 64A 17.5mΩ@10V,64A 300W 4V@270uA 1PCSNChannel TO-263-2 MOSFETs ROHS. This product comes in a TO-263-2 package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 250V
  • Continuous Drain Current (Id): 64A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 17.5mΩ@10V,64A
  • Power Dissipation (Pd): 300W
  • Gate Threshold Voltage (Vgs(th)@Id): 4V@270uA
  • Reverse Transfer Capacitance (Crss@Vds): 85pF@25V
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): 5.24nF@25V
  • Total Gate Charge (Qg@Vgs): 67nC@10V
  • Operating Temperature: -55℃~+175℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 2.484 grams.

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Full Specifications of IPB64N25S3-20

Model NumberIPB64N25S3-20
Model NameInfineon Technologies IPB64N25S3-20
CategoryMOSFETs
BrandInfineon Technologies
Description250V 64A 17.5mΩ@10V,64A 300W 4V@270uA 1PCSNChannel TO-263-2 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:2.484 grams / 0.087621 oz
Package / CaseTO-263-2
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCN-
Drain Source Voltage (Vdss)250V
Continuous Drain Current (Id)64A
Drain Source On Resistance (RDS(on)@Vgs,Id)17.5mΩ@10V,64A
Power Dissipation (Pd)300W
Gate Threshold Voltage (Vgs(th)@Id)4V@270uA
Reverse Transfer Capacitance (Crss@Vds)85pF@25V
Type1PCSNChannel
Input Capacitance (Ciss@Vds)5.24nF@25V
Total Gate Charge (Qg@Vgs)67nC@10V
Operating Temperature-55℃~+175℃@(Tj)

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