IPB65R110CFD7ATMA1 by Infineon Technologies – Specifications

Infineon Technologies IPB65R110CFD7ATMA1 is a IPB65R110CFD7ATMA1 from Infineon Technologies, part of the MOSFETs. It is designed for 650V 22A 114W 110mΩ@9.7A,10V 4.5V@480uA 1PCSNChannel TO-263-3 MOSFETs ROHS. This product comes in a TO-263-3 package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 650V
  • Continuous Drain Current (Id): 22A
  • Power Dissipation (Pd): 114W
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 110mΩ@9.7A,10V
  • Gate Threshold Voltage (Vgs(th)@Id): 4.5V@480uA
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): 1.942nF@400V
  • Total Gate Charge (Qg@Vgs): 41nC@10V
  • Operating Temperature: -55℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 2.1 grams.

More on IPB65R110CFD7ATMA1

Full Specifications of IPB65R110CFD7ATMA1

Model NumberIPB65R110CFD7ATMA1
Model NameInfineon Technologies IPB65R110CFD7ATMA1
CategoryMOSFETs
BrandInfineon Technologies
Description650V 22A 114W 110mΩ@9.7A,10V 4.5V@480uA 1PCSNChannel TO-263-3 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:2.100 grams / 0.074075 oz
Package / CaseTO-263-3
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)650V
Continuous Drain Current (Id)22A
Power Dissipation (Pd)114W
Drain Source On Resistance (RDS(on)@Vgs,Id)110mΩ@9.7A,10V
Gate Threshold Voltage (Vgs(th)@Id)4.5V@480uA
Type1PCSNChannel
Input Capacitance (Ciss@Vds)1.942nF@400V
Total Gate Charge (Qg@Vgs)41nC@10V
Operating Temperature-55℃~+150℃@(Tj)

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