IPB65R110CFDATMA1 by Infineon Technologies – Specifications

Infineon Technologies IPB65R110CFDATMA1 is a IPB65R110CFDATMA1 from Infineon Technologies, part of the MOSFETs. It is designed for 650V 31.2A 277.8W 110mΩ@12.7A,10V [email protected] 1PCSNChannel TO-263-3 MOSFETs ROHS. This product comes in a TO-263-3 package and is sold as Tape & Reel (TR). Key features include:

• Drain Source Voltage (Vdss): 650V
• Continuous Drain Current (Id): 31.2A
• Power Dissipation (Pd): 277.8W
• Drain Source On Resistance (RDS(on)@Vgs,Id): 110mΩ@12.7A,10V
• Gate Threshold Voltage (Vgs(th)@Id): [email protected]
• Type: 1PCSNChannel
• Input Capacitance (Ciss@Vds): 3.24nF@100V
• Total Gate Charge (Qg@Vgs): 118nC@10V
• Operating Temperature: -55℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.