Infineon Technologies IPB65R230CFD7AATMA1 is a IPB65R230CFD7AATMA1 from Infineon Technologies, part of the MOSFETs. It is designed for 650V 11A 230mΩ@5.2A,10V 63W 4.5V@260uA 1PCSNChannel TO-263-3 MOSFETs ROHS. This product comes in a TO-263-3 package and is sold as Tape & Reel (TR). Key features include:
- Drain Source Voltage (Vdss): 650V
- Continuous Drain Current (Id): 11A
- Drain Source On Resistance (RDS(on)@Vgs,Id): 230mΩ@5.2A,10V
- Power Dissipation (Pd): 63W
- Gate Threshold Voltage (Vgs(th)@Id): 4.5V@260uA
- Type: 1PCSNChannel
- Input Capacitance (Ciss@Vds): 1.044nF@400V
- Total Gate Charge (Qg@Vgs): 23nC@10V
- Operating Temperature: -40℃~+150℃@(Tj)
Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.
More on IPB65R230CFD7AATMA1
Full Specifications of IPB65R230CFD7AATMA1
Model Number | IPB65R230CFD7AATMA1 |
Model Name | Infineon Technologies IPB65R230CFD7AATMA1 |
Category | MOSFETs |
Brand | Infineon Technologies |
Description | 650V 11A 230mΩ@5.2A,10V 63W 4.5V@260uA 1PCSNChannel TO-263-3 MOSFETs ROHS |
RoHS | Lead free / RoHS Compliant |
Unit | Piece |
Weight: | 1.000 grams / 0.035274 oz |
Package / Case | TO-263-3 |
Package / Arrange | Tape & Reel (TR) |
Battery | No |
ECCN | EAR99 |
Drain Source Voltage (Vdss) | 650V |
Continuous Drain Current (Id) | 11A |
Drain Source On Resistance (RDS(on)@Vgs,Id) | 230mΩ@5.2A,10V |
Power Dissipation (Pd) | 63W |
Gate Threshold Voltage (Vgs(th)@Id) | 4.5V@260uA |
Type | 1PCSNChannel |
Input Capacitance (Ciss@Vds) | 1.044nF@400V |
Total Gate Charge (Qg@Vgs) | 23nC@10V |
Operating Temperature | -40℃~+150℃@(Tj) |
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