IPB65R280E6 by Infineon Technologies – Specifications

Infineon Technologies IPB65R280E6 is a IPB65R280E6 from Infineon Technologies, part of the MOSFETs. It is designed for 650V 13.8A 104W 280mΩ@4.4A,10V 3.5V@440uA 1PCSNChannel TO-263-3 MOSFETs ROHS. This product comes in a TO-263-3 package and is sold as Bag-packed. Key features include:

  • Drain Source Voltage (Vdss): 650V
  • Continuous Drain Current (Id): 13.8A
  • Power Dissipation (Pd): 104W
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 280mΩ@4.4A,10V
  • Gate Threshold Voltage (Vgs(th)@Id): 3.5V@440uA
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): 950pF@100V
  • Total Gate Charge (Qg@Vgs): 45nC@10V
  • Operating Temperature: -55℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.

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Full Specifications of IPB65R280E6

Model NumberIPB65R280E6
Model NameInfineon Technologies IPB65R280E6
CategoryMOSFETs
BrandInfineon Technologies
Description650V 13.8A 104W 280mΩ@4.4A,10V 3.5V@440uA 1PCSNChannel TO-263-3 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:1.000 grams / 0.035274 oz
Package / CaseTO-263-3
Package / ArrangeBag-packed
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)650V
Continuous Drain Current (Id)13.8A
Power Dissipation (Pd)104W
Drain Source On Resistance (RDS(on)@Vgs,Id)280mΩ@4.4A,10V
Gate Threshold Voltage (Vgs(th)@Id)3.5V@440uA
Type1PCSNChannel
Input Capacitance (Ciss@Vds)950pF@100V
Total Gate Charge (Qg@Vgs)45nC@10V
Operating Temperature-55℃~+150℃@(Tj)

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