IPB77N06S212ATMA2 by Infineon Technologies – Specifications

Infineon Technologies IPB77N06S212ATMA2 is a IPB77N06S212ATMA2 from Infineon Technologies, part of the MOSFETs. It is designed for 55V 77A 11.7mΩ@38A,10V 158W 4V@93uA 1PCSNChannel TO-263 MOSFETs ROHS. This product comes in a TO-263 package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 55V
  • Continuous Drain Current (Id): 77A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 11.7mΩ@38A,10V
  • Power Dissipation (Pd): 158W
  • Gate Threshold Voltage (Vgs(th)@Id): 4V@93uA
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): 1.77nF@25V
  • Total Gate Charge (Qg@Vgs): 60nC@10V
  • Operating Temperature: -55℃~+175℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.

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Full Specifications of IPB77N06S212ATMA2

Model NumberIPB77N06S212ATMA2
Model NameInfineon Technologies IPB77N06S212ATMA2
CategoryMOSFETs
BrandInfineon Technologies
Description55V 77A 11.7mΩ@38A,10V 158W 4V@93uA 1PCSNChannel TO-263 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:1.000 grams / 0.035274 oz
Package / CaseTO-263
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)55V
Continuous Drain Current (Id)77A
Drain Source On Resistance (RDS(on)@Vgs,Id)11.7mΩ@38A,10V
Power Dissipation (Pd)158W
Gate Threshold Voltage (Vgs(th)@Id)4V@93uA
Type1PCSNChannel
Input Capacitance (Ciss@Vds)1.77nF@25V
Total Gate Charge (Qg@Vgs)60nC@10V
Operating Temperature-55℃~+175℃@(Tj)

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