IPB80N03S4L02ATMA1 by Infineon Technologies – Specifications

Infineon Technologies IPB80N03S4L02ATMA1 is a IPB80N03S4L02ATMA1 from Infineon Technologies, part of the MOSFETs. It is designed for 30V 80A 2.4mΩ@10V,80A 136W 2.2V@90uA 1PCSNChannel TO-263 MOSFETs ROHS. This product comes in a TO-263 package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 30V
  • Continuous Drain Current (Id): 80A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 2.4mΩ@10V,80A
  • Power Dissipation (Pd): 136W
  • Gate Threshold Voltage (Vgs(th)@Id): 2.2V@90uA
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): 9.75nF@25V
  • Total Gate Charge (Qg@Vgs): 140nC@10V
  • Operating Temperature: -55℃~+175℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.

More on IPB80N03S4L02ATMA1

Full Specifications of IPB80N03S4L02ATMA1

Model NumberIPB80N03S4L02ATMA1
Model NameInfineon Technologies IPB80N03S4L02ATMA1
CategoryMOSFETs
BrandInfineon Technologies
Description30V 80A 2.4mΩ@10V,80A 136W 2.2V@90uA 1PCSNChannel TO-263 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:1.000 grams / 0.035274 oz
Package / CaseTO-263
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)30V
Continuous Drain Current (Id)80A
Drain Source On Resistance (RDS(on)@Vgs,Id)2.4mΩ@10V,80A
Power Dissipation (Pd)136W
Gate Threshold Voltage (Vgs(th)@Id)2.2V@90uA
Type1PCSNChannel
Input Capacitance (Ciss@Vds)9.75nF@25V
Total Gate Charge (Qg@Vgs)140nC@10V
Operating Temperature-55℃~+175℃@(Tj)

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