IPB80N03S4L03 by Infineon Technologies – Specifications

Infineon Technologies IPB80N03S4L03 is a IPB80N03S4L03 from Infineon Technologies, part of the MOSFETs. It is designed for 30V 80A 94W 3.7mΩ@80A,10V 2.2V@45uA N Channel TO-263-3-2 MOSFETs ROHS. This product comes in a TO-263-3-2 package and is sold as Bag-packed. Key features include:

  • Drain Source Voltage (Vdss): 30V
  • Continuous Drain Current (Id): 80A
  • Power Dissipation (Pd): 94W
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 3.7mΩ@80A,10V
  • Gate Threshold Voltage (Vgs(th)@Id): 2.2V@45uA
  • Type: N Channel
  • Input Capacitance (Ciss@Vds): 5.1nF@25V
  • Total Gate Charge (Qg@Vgs): 75nC@10V
  • Operating Temperature: -55℃~+175℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.

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Full Specifications of IPB80N03S4L03

Model NumberIPB80N03S4L03
Model NameInfineon Technologies IPB80N03S4L03
CategoryMOSFETs
BrandInfineon Technologies
Description30V 80A 94W 3.7mΩ@80A,10V 2.2V@45uA N Channel TO-263-3-2 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:1.000 grams / 0.035274 oz
Package / CaseTO-263-3-2
Package / ArrangeBag-packed
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)30V
Continuous Drain Current (Id)80A
Power Dissipation (Pd)94W
Drain Source On Resistance (RDS(on)@Vgs,Id)3.7mΩ@80A,10V
Gate Threshold Voltage (Vgs(th)@Id)2.2V@45uA
TypeN Channel
Input Capacitance (Ciss@Vds)5.1nF@25V
Total Gate Charge (Qg@Vgs)75nC@10V
Operating Temperature-55℃~+175℃@(Tj)

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