IPB80N04S3-03 by Infineon Technologies – Specifications

Infineon Technologies IPB80N04S3-03 is a IPB80N04S3-03 from Infineon Technologies, part of the MOSFETs. It is designed for 40V 80A 3.2mΩ@10V,80A 188W 4V@120uA 1PCSNChannel TO-263-3 MOSFETs ROHS. This product comes in a TO-263-3 package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 40V
  • Continuous Drain Current (Id): 80A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 3.2mΩ@10V,80A
  • Power Dissipation (Pd): 188W
  • Gate Threshold Voltage (Vgs(th)@Id): 4V@120uA
  • Type: 1PCSNChannel

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.

More on IPB80N04S3-03

Full Specifications of IPB80N04S3-03

Model NumberIPB80N04S3-03
Model NameInfineon Technologies IPB80N04S3-03
CategoryMOSFETs
BrandInfineon Technologies
Description40V 80A 3.2mΩ@10V,80A 188W 4V@120uA 1PCSNChannel TO-263-3 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:1.000 grams / 0.035274 oz
Package / CaseTO-263-3
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCN-
Drain Source Voltage (Vdss)40V
Continuous Drain Current (Id)80A
Drain Source On Resistance (RDS(on)@Vgs,Id)3.2mΩ@10V,80A
Power Dissipation (Pd)188W
Gate Threshold Voltage (Vgs(th)@Id)4V@120uA
Type1PCSNChannel

Compare Infineon Technologies - IPB80N04S3-03 With Other 200 Models

Related Models - IPB80N04S3-03 Alternative

Scroll to Top