IPB80N06S2-07 by Infineon Technologies – Specifications

Infineon Technologies IPB80N06S2-07 is a IPB80N06S2-07 from Infineon Technologies, part of the MOSFETs. It is designed for 55V 80A 5.3mΩ@10V,68A 250W 3V@180uA 1PCSNChannel TO-263 MOSFETs ROHS. This product comes in a TO-263 package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 55V
  • Continuous Drain Current (Id): 80A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 5.3mΩ@10V,68A
  • Power Dissipation (Pd): 250W
  • Gate Threshold Voltage (Vgs(th)@Id): 3V@180uA
  • Reverse Transfer Capacitance (Crss@Vds): 215pF@25V
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): 3.4nF@25V
  • Total Gate Charge (Qg@Vgs): 86nC@0~10V
  • Operating Temperature: -55℃~+175℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.

More on IPB80N06S2-07

Full Specifications of IPB80N06S2-07

Model NumberIPB80N06S2-07
Model NameInfineon Technologies IPB80N06S2-07
CategoryMOSFETs
BrandInfineon Technologies
Description55V 80A 5.3mΩ@10V,68A 250W 3V@180uA 1PCSNChannel TO-263 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:1.000 grams / 0.035274 oz
Package / CaseTO-263
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCN-
Drain Source Voltage (Vdss)55V
Continuous Drain Current (Id)80A
Drain Source On Resistance (RDS(on)@Vgs,Id)5.3mΩ@10V,68A
Power Dissipation (Pd)250W
Gate Threshold Voltage (Vgs(th)@Id)3V@180uA
Reverse Transfer Capacitance (Crss@Vds)215pF@25V
Type1PCSNChannel
Input Capacitance (Ciss@Vds)3.4nF@25V
Total Gate Charge (Qg@Vgs)86nC@0~10V
Operating Temperature-55℃~+175℃@(Tj)

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