IPB80N06S2-09 by Infineon Technologies – Specifications

Infineon Technologies IPB80N06S2-09 is a IPB80N06S2-09 from Infineon Technologies, part of the MOSFETs. It is designed for 55V 80A 9.1mΩ@10V,50A 190W 4V@125uA 1PCSNChannel TO-263-3 MOSFETs ROHS. This product comes in a TO-263-3 package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 55V
  • Continuous Drain Current (Id): 80A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 9.1mΩ@10V,50A
  • Power Dissipation (Pd): 190W
  • Gate Threshold Voltage (Vgs(th)@Id): 4V@125uA
  • Type: 1PCSNChannel

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.

More on IPB80N06S2-09

Full Specifications of IPB80N06S2-09

Model NumberIPB80N06S2-09
Model NameInfineon Technologies IPB80N06S2-09
CategoryMOSFETs
BrandInfineon Technologies
Description55V 80A 9.1mΩ@10V,50A 190W 4V@125uA 1PCSNChannel TO-263-3 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:1.000 grams / 0.035274 oz
Package / CaseTO-263-3
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCN-
Drain Source Voltage (Vdss)55V
Continuous Drain Current (Id)80A
Drain Source On Resistance (RDS(on)@Vgs,Id)9.1mΩ@10V,50A
Power Dissipation (Pd)190W
Gate Threshold Voltage (Vgs(th)@Id)4V@125uA
Type1PCSNChannel

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