IPB80N06S4L05ATMA2 by Infineon Technologies – Specifications

Infineon Technologies IPB80N06S4L05ATMA2 is a IPB80N06S4L05ATMA2 from Infineon Technologies, part of the MOSFETs. It is designed for 60V 80A 5.1mΩ@80A,10V 107W 2.2V@60uA 1PCSNChannel TO-263 MOSFETs ROHS. This product comes in a TO-263 package and is sold as Bag-packed. Key features include:

• Drain Source Voltage (Vdss): 60V
• Continuous Drain Current (Id): 80A
• Drain Source On Resistance (RDS(on)@Vgs,Id): 5.1mΩ@80A,10V
• Power Dissipation (Pd): 107W
• Gate Threshold Voltage (Vgs(th)@Id): 2.2V@60uA
• Type: 1PCSNChannel
• Input Capacitance (Ciss@Vds): 8.18nF@25V
• Total Gate Charge (Qg@Vgs): 110nC@10V
• Operating Temperature: -55℃~+175℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.