IPB80N06S4L07ATMA2 by Infineon Technologies – Specifications

Infineon Technologies IPB80N06S4L07ATMA2 is a IPB80N06S4L07ATMA2 from Infineon Technologies, part of the MOSFETs. It is designed for 60V 80A 79W 6.7mΩ@80A,10V 2.2V@40uA 1PCSNChannel TO-263 MOSFETs ROHS. This product comes in a TO-263 package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 60V
  • Continuous Drain Current (Id): 80A
  • Power Dissipation (Pd): 79W
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 6.7mΩ@80A,10V
  • Gate Threshold Voltage (Vgs(th)@Id): 2.2V@40uA
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): 5.68nF@25V
  • Total Gate Charge (Qg@Vgs): 75nC@10V
  • Operating Temperature: -55℃~+175℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1.56 grams.

More on IPB80N06S4L07ATMA2

Full Specifications of IPB80N06S4L07ATMA2

Model NumberIPB80N06S4L07ATMA2
Model NameInfineon Technologies IPB80N06S4L07ATMA2
CategoryMOSFETs
BrandInfineon Technologies
Description60V 80A 79W 6.7mΩ@80A,10V 2.2V@40uA 1PCSNChannel TO-263 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:1.560 grams / 0.055027 oz
Package / CaseTO-263
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)60V
Continuous Drain Current (Id)80A
Power Dissipation (Pd)79W
Drain Source On Resistance (RDS(on)@Vgs,Id)6.7mΩ@80A,10V
Gate Threshold Voltage (Vgs(th)@Id)2.2V@40uA
Type1PCSNChannel
Input Capacitance (Ciss@Vds)5.68nF@25V
Total Gate Charge (Qg@Vgs)75nC@10V
Operating Temperature-55℃~+175℃@(Tj)

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