IPB80P03P4L04ATMA1 by Infineon Technologies – Specifications

Infineon Technologies IPB80P03P4L04ATMA1 is a IPB80P03P4L04ATMA1 from Infineon Technologies, part of the MOSFETs. It is designed for 30V 80A 137W 4.1mΩ@80A,10V 2V@253uA 1PCSPChannel TO-263 MOSFETs ROHS. This product comes in a TO-263 package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 30V
  • Continuous Drain Current (Id): 80A
  • Power Dissipation (Pd): 137W
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 4.1mΩ@80A,10V
  • Gate Threshold Voltage (Vgs(th)@Id): 2V@253uA
  • Type: 1PCSPChannel
  • Input Capacitance (Ciss@Vds): 11.3nF@25V
  • Total Gate Charge (Qg@Vgs): 160nC@10V
  • Operating Temperature: -55℃~+175℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.

More on IPB80P03P4L04ATMA1

Full Specifications of IPB80P03P4L04ATMA1

Model NumberIPB80P03P4L04ATMA1
Model NameInfineon Technologies IPB80P03P4L04ATMA1
CategoryMOSFETs
BrandInfineon Technologies
Description30V 80A 137W 4.1mΩ@80A,10V 2V@253uA 1PCSPChannel TO-263 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:1.000 grams / 0.035274 oz
Package / CaseTO-263
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)30V
Continuous Drain Current (Id)80A
Power Dissipation (Pd)137W
Drain Source On Resistance (RDS(on)@Vgs,Id)4.1mΩ@80A,10V
Gate Threshold Voltage (Vgs(th)@Id)2V@253uA
Type1PCSPChannel
Input Capacitance (Ciss@Vds)11.3nF@25V
Total Gate Charge (Qg@Vgs)160nC@10V
Operating Temperature-55℃~+175℃@(Tj)

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