IPB80P03P4L07ATMA2 by Infineon Technologies – Specifications

Infineon Technologies IPB80P03P4L07ATMA2 is a IPB80P03P4L07ATMA2 from Infineon Technologies, part of the MOSFETs. It is designed for 30V 80A 6.9mΩ@80A,10V 88W 2V@130uA 1PCSPChannel TO-263 MOSFETs ROHS. This product comes in a TO-263 package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 30V
  • Continuous Drain Current (Id): 80A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 6.9mΩ@80A,10V
  • Power Dissipation (Pd): 88W
  • Gate Threshold Voltage (Vgs(th)@Id): 2V@130uA
  • Type: 1PCSPChannel
  • Input Capacitance (Ciss@Vds): 5.7nF@25V
  • Total Gate Charge (Qg@Vgs): 80nC@10V
  • Operating Temperature: -55℃~+175℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.

More on IPB80P03P4L07ATMA2

Full Specifications of IPB80P03P4L07ATMA2

Model NumberIPB80P03P4L07ATMA2
Model NameInfineon Technologies IPB80P03P4L07ATMA2
CategoryMOSFETs
BrandInfineon Technologies
Description30V 80A 6.9mΩ@80A,10V 88W 2V@130uA 1PCSPChannel TO-263 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:1.000 grams / 0.035274 oz
Package / CaseTO-263
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)30V
Continuous Drain Current (Id)80A
Drain Source On Resistance (RDS(on)@Vgs,Id)6.9mΩ@80A,10V
Power Dissipation (Pd)88W
Gate Threshold Voltage (Vgs(th)@Id)2V@130uA
Type1PCSPChannel
Input Capacitance (Ciss@Vds)5.7nF@25V
Total Gate Charge (Qg@Vgs)80nC@10V
Operating Temperature-55℃~+175℃@(Tj)

Compare Infineon Technologies - IPB80P03P4L07ATMA2 With Other 200 Models

Related Models - IPB80P03P4L07ATMA2 Alternative

Scroll to Top