Infineon Technologies IPB80P04P405ATMA2 is a IPB80P04P405ATMA2 from Infineon Technologies, part of the MOSFETs. It is designed for 40V 80A 125W 5.2mΩ@80A,10V 4V@250uA P Channel TO-263-3-2 MOSFETs ROHS. This product comes in a TO-263-3-2 package and is sold as Tape & Reel (TR). Key features include:
- Drain Source Voltage (Vdss): 40V
- Continuous Drain Current (Id): 80A
- Power Dissipation (Pd): 125W
- Drain Source On Resistance (RDS(on)@Vgs,Id): 5.2mΩ@80A,10V
- Gate Threshold Voltage (Vgs(th)@Id): 4V@250uA
- Type: P Channel
- Input Capacitance (Ciss@Vds): 10.3nF@25V
- Total Gate Charge (Qg@Vgs): 151nC@10V
- Operating Temperature: -55℃~+175℃@(Tj)
Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.
More on IPB80P04P405ATMA2
Full Specifications of IPB80P04P405ATMA2
Model Number | IPB80P04P405ATMA2 |
Model Name | Infineon Technologies IPB80P04P405ATMA2 |
Category | MOSFETs |
Brand | Infineon Technologies |
Description | 40V 80A 125W 5.2mΩ@80A,10V 4V@250uA P Channel TO-263-3-2 MOSFETs ROHS |
RoHS | Lead free / RoHS Compliant |
Unit | Piece |
Weight: | 1.000 grams / 0.035274 oz |
Package / Case | TO-263-3-2 |
Package / Arrange | Tape & Reel (TR) |
Battery | No |
ECCN | EAR99 |
Drain Source Voltage (Vdss) | 40V |
Continuous Drain Current (Id) | 80A |
Power Dissipation (Pd) | 125W |
Drain Source On Resistance (RDS(on)@Vgs,Id) | 5.2mΩ@80A,10V |
Gate Threshold Voltage (Vgs(th)@Id) | 4V@250uA |
Type | P Channel |
Input Capacitance (Ciss@Vds) | 10.3nF@25V |
Total Gate Charge (Qg@Vgs) | 151nC@10V |
Operating Temperature | -55℃~+175℃@(Tj) |
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