IPC218N04N3X7SA1 by Infineon Technologies – Specifications

Infineon Technologies IPC218N04N3X7SA1 is a IPC218N04N3X7SA1 from Infineon Technologies, part of the MOSFETs. It is designed for 40V 50mΩ@2A,10V 4V@200uA 1PCSNChannel - MOSFETs ROHS. This product comes in a - package and is sold as Bag-packed. Key features include:

  • Drain Source Voltage (Vdss): 40V
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 50mΩ@2A,10V
  • Gate Threshold Voltage (Vgs(th)@Id): 4V@200uA
  • Type: 1PCSNChannel

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.

More on IPC218N04N3X7SA1

Full Specifications of IPC218N04N3X7SA1

Model NumberIPC218N04N3X7SA1
Model NameInfineon Technologies IPC218N04N3X7SA1
CategoryMOSFETs
BrandInfineon Technologies
Description40V 50mΩ@2A,10V 4V@200uA 1PCSNChannel - MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:1.000 grams / 0.035274 oz
Package / Case-
Package / ArrangeBag-packed
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)40V
Drain Source On Resistance (RDS(on)@Vgs,Id)50mΩ@2A,10V
Gate Threshold Voltage (Vgs(th)@Id)4V@200uA
Type1PCSNChannel

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