IPC70N04S54R6ATMA1 by Infineon Technologies – Specifications

Infineon Technologies IPC70N04S54R6ATMA1 is a IPC70N04S54R6ATMA1 from Infineon Technologies, part of the MOSFETs. It is designed for 40V 70A 4.6mΩ@35A,10V 50W 3.4V@17uA 1PCSNChannel TDSON-8 MOSFETs ROHS. This product comes in a TDSON-8 package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 40V
  • Continuous Drain Current (Id): 70A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 4.6mΩ@35A,10V
  • Power Dissipation (Pd): 50W
  • Gate Threshold Voltage (Vgs(th)@Id): 3.4V@17uA
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): 1.43nF@25V
  • Total Gate Charge (Qg@Vgs): 24.2nC@10V
  • Operating Temperature: -55℃~+175℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.

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Full Specifications of IPC70N04S54R6ATMA1

Model NumberIPC70N04S54R6ATMA1
Model NameInfineon Technologies IPC70N04S54R6ATMA1
CategoryMOSFETs
BrandInfineon Technologies
Description40V 70A 4.6mΩ@35A,10V 50W 3.4V@17uA 1PCSNChannel TDSON-8 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:1.000 grams / 0.035274 oz
Package / CaseTDSON-8
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)40V
Continuous Drain Current (Id)70A
Drain Source On Resistance (RDS(on)@Vgs,Id)4.6mΩ@35A,10V
Power Dissipation (Pd)50W
Gate Threshold Voltage (Vgs(th)@Id)3.4V@17uA
Type1PCSNChannel
Input Capacitance (Ciss@Vds)1.43nF@25V
Total Gate Charge (Qg@Vgs)24.2nC@10V
Operating Temperature-55℃~+175℃@(Tj)

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