IPD031N03LGBTMA1 by Infineon Technologies – Specifications

Infineon Technologies IPD031N03LGBTMA1 is a IPD031N03LGBTMA1 from Infineon Technologies, part of the MOSFETs. It is designed for 30V 90A 3.1mΩ@30A,10V 94W 2.2V@250uA 1PCSNChannel TO-252 MOSFETs ROHS. This product comes in a TO-252 package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 30V
  • Continuous Drain Current (Id): 90A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 3.1mΩ@30A,10V
  • Power Dissipation (Pd): 94W
  • Gate Threshold Voltage (Vgs(th)@Id): 2.2V@250uA
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): 5.3nF@15V
  • Total Gate Charge (Qg@Vgs): 51nC@10V
  • Operating Temperature: -55℃~+175℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.

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Full Specifications of IPD031N03LGBTMA1

Model NumberIPD031N03LGBTMA1
Model NameInfineon Technologies IPD031N03LGBTMA1
CategoryMOSFETs
BrandInfineon Technologies
Description30V 90A 3.1mΩ@30A,10V 94W 2.2V@250uA 1PCSNChannel TO-252 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:1.000 grams / 0.035274 oz
Package / CaseTO-252
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)30V
Continuous Drain Current (Id)90A
Drain Source On Resistance (RDS(on)@Vgs,Id)3.1mΩ@30A,10V
Power Dissipation (Pd)94W
Gate Threshold Voltage (Vgs(th)@Id)2.2V@250uA
Type1PCSNChannel
Input Capacitance (Ciss@Vds)5.3nF@15V
Total Gate Charge (Qg@Vgs)51nC@10V
Operating Temperature-55℃~+175℃@(Tj)

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