IPD031N06L3GATMA1 by Infineon Technologies – Specifications

Infineon Technologies IPD031N06L3GATMA1 is a IPD031N06L3GATMA1 from Infineon Technologies, part of the MOSFETs. It is designed for 60V 100A 3.1mΩ@100A,10V 167W 2.2V@93uA 1PCSNChannel TO-252-3 MOSFETs ROHS. This product comes in a TO-252-3 package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 60V
  • Continuous Drain Current (Id): 100A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 3.1mΩ@100A,10V
  • Power Dissipation (Pd): 167W
  • Gate Threshold Voltage (Vgs(th)@Id): 2.2V@93uA
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): 13nF@30V
  • Total Gate Charge (Qg@Vgs): [email protected]
  • Operating Temperature: -55℃~+175℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.49 grams.

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Full Specifications of IPD031N06L3GATMA1

Model NumberIPD031N06L3GATMA1
Model NameInfineon Technologies IPD031N06L3GATMA1
CategoryMOSFETs
BrandInfineon Technologies
Description60V 100A 3.1mΩ@100A,10V 167W 2.2V@93uA 1PCSNChannel TO-252-3 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:0.490 grams / 0.017284 oz
Package / CaseTO-252-3
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)60V
Continuous Drain Current (Id)100A
Drain Source On Resistance (RDS(on)@Vgs,Id)3.1mΩ@100A,10V
Power Dissipation (Pd)167W
Gate Threshold Voltage (Vgs(th)@Id)2.2V@93uA
Type1PCSNChannel
Input Capacitance (Ciss@Vds)13nF@30V
Total Gate Charge (Qg@Vgs)[email protected]
Operating Temperature-55℃~+175℃@(Tj)

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