IPD050N03L G by Infineon Technologies – Specifications

Infineon Technologies IPD050N03L G is a IPD050N03L G from Infineon Technologies, part of the MOSFETs. It is designed for 30V 50A 68W 5mΩ@10V,30A 2.2V@250uA 1PCSNChannel TO-252-3 MOSFETs ROHS. This product comes in a TO-252-3 package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 30V
  • Continuous Drain Current (Id): 50A
  • Power Dissipation (Pd): 68W
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 5mΩ@10V,30A
  • Gate Threshold Voltage (Vgs(th)@Id): 2.2V@250uA
  • Type: 1PCSNChannel

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.

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Full Specifications of IPD050N03L G

Model NumberIPD050N03L G
Model NameInfineon Technologies IPD050N03L G
CategoryMOSFETs
BrandInfineon Technologies
Description30V 50A 68W 5mΩ@10V,30A 2.2V@250uA 1PCSNChannel TO-252-3 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:1.000 grams / 0.035274 oz
Package / CaseTO-252-3
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCN-
Drain Source Voltage (Vdss)30V
Continuous Drain Current (Id)50A
Power Dissipation (Pd)68W
Drain Source On Resistance (RDS(on)@Vgs,Id)5mΩ@10V,30A
Gate Threshold Voltage (Vgs(th)@Id)2.2V@250uA
Type1PCSNChannel

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