IPD060N03LGATMA1 by Infineon Technologies – Specifications

Infineon Technologies IPD060N03LGATMA1 is a IPD060N03LGATMA1 from Infineon Technologies, part of the MOSFETs. It is designed for 30V 50A 6mΩ@30A,10V 56W 2.2V@250uA 1PCSNChannel TO-252-3 MOSFETs ROHS. This product comes in a TO-252-3 package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 30V
  • Continuous Drain Current (Id): 50A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 6mΩ@30A,10V
  • Power Dissipation (Pd): 56W
  • Gate Threshold Voltage (Vgs(th)@Id): 2.2V@250uA
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): 2.4nF@15V
  • Total Gate Charge (Qg@Vgs): 23nC@10V
  • Operating Temperature: -55℃~+175℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.

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Full Specifications of IPD060N03LGATMA1

Model NumberIPD060N03LGATMA1
Model NameInfineon Technologies IPD060N03LGATMA1
CategoryMOSFETs
BrandInfineon Technologies
Description30V 50A 6mΩ@30A,10V 56W 2.2V@250uA 1PCSNChannel TO-252-3 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:1.000 grams / 0.035274 oz
Package / CaseTO-252-3
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)30V
Continuous Drain Current (Id)50A
Drain Source On Resistance (RDS(on)@Vgs,Id)6mΩ@30A,10V
Power Dissipation (Pd)56W
Gate Threshold Voltage (Vgs(th)@Id)2.2V@250uA
Type1PCSNChannel
Input Capacitance (Ciss@Vds)2.4nF@15V
Total Gate Charge (Qg@Vgs)23nC@10V
Operating Temperature-55℃~+175℃@(Tj)

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