IPD068P03L3GATMA1 by Infineon Technologies – Specifications

Infineon Technologies IPD068P03L3GATMA1 is a IPD068P03L3GATMA1 from Infineon Technologies, part of the MOSFETs. It is designed for 30V 70A 6.8mΩ@70A,10V 100W 2V@150uA 1PCSPChannel TO-252-3 MOSFETs ROHS. This product comes in a TO-252-3 package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 30V
  • Continuous Drain Current (Id): 70A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 6.8mΩ@70A,10V
  • Power Dissipation (Pd): 100W
  • Gate Threshold Voltage (Vgs(th)@Id): 2V@150uA
  • Type: 1PCSPChannel
  • Input Capacitance (Ciss@Vds): 7.72nF@15V
  • Total Gate Charge (Qg@Vgs): 91nC@10V
  • Operating Temperature: -55℃~+175℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.4 grams.

More on IPD068P03L3GATMA1

Full Specifications of IPD068P03L3GATMA1

Model NumberIPD068P03L3GATMA1
Model NameInfineon Technologies IPD068P03L3GATMA1
CategoryMOSFETs
BrandInfineon Technologies
Description30V 70A 6.8mΩ@70A,10V 100W 2V@150uA 1PCSPChannel TO-252-3 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:0.400 grams / 0.01411 oz
Package / CaseTO-252-3
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)30V
Continuous Drain Current (Id)70A
Drain Source On Resistance (RDS(on)@Vgs,Id)6.8mΩ@70A,10V
Power Dissipation (Pd)100W
Gate Threshold Voltage (Vgs(th)@Id)2V@150uA
Type1PCSPChannel
Input Capacitance (Ciss@Vds)7.72nF@15V
Total Gate Charge (Qg@Vgs)91nC@10V
Operating Temperature-55℃~+175℃@(Tj)

Compare Infineon Technologies - IPD068P03L3GATMA1 With Other 200 Models

Related Models - IPD068P03L3GATMA1 Alternative

Scroll to Top