Infineon Technologies IPD06N03LAG is a IPD06N03LAG from Infineon Technologies, part of the MOSFETs. It is designed for 25V 50A 83W 5.7mΩ@30A,10V 2V@40uA 1PCSNChannel TO-252 MOSFETs ROHS. This product comes in a TO-252 package and is sold as Bag-packed. Key features include:
- Drain Source Voltage (Vdss): 25V
- Continuous Drain Current (Id): 50A
- Power Dissipation (Pd): 83W
- Drain Source On Resistance (RDS(on)@Vgs,Id): 5.7mΩ@30A,10V
- Gate Threshold Voltage (Vgs(th)@Id): 2V@40uA
- Type: 1PCSNChannel
- Input Capacitance (Ciss@Vds): 2.653nF@15V
- Total Gate Charge (Qg@Vgs): 22nC@5V
- Operating Temperature: -55℃~+175℃@(Tj)
Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.
More on IPD06N03LAG
Full Specifications of IPD06N03LAG
Model Number | IPD06N03LAG |
Model Name | Infineon Technologies IPD06N03LAG |
Category | MOSFETs |
Brand | Infineon Technologies |
Description | 25V 50A 83W 5.7mΩ@30A,10V 2V@40uA 1PCSNChannel TO-252 MOSFETs ROHS |
RoHS | Lead free / RoHS Compliant |
Unit | Piece |
Weight: | 1.000 grams / 0.035274 oz |
Package / Case | TO-252 |
Package / Arrange | Bag-packed |
Battery | No |
ECCN | EAR99 |
Drain Source Voltage (Vdss) | 25V |
Continuous Drain Current (Id) | 50A |
Power Dissipation (Pd) | 83W |
Drain Source On Resistance (RDS(on)@Vgs,Id) | 5.7mΩ@30A,10V |
Gate Threshold Voltage (Vgs(th)@Id) | 2V@40uA |
Type | 1PCSNChannel |
Input Capacitance (Ciss@Vds) | 2.653nF@15V |
Total Gate Charge (Qg@Vgs) | 22nC@5V |
Operating Temperature | -55℃~+175℃@(Tj) |
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