IPD100N04S402ATMA1 by Infineon Technologies – Specifications

Infineon Technologies IPD100N04S402ATMA1 is a IPD100N04S402ATMA1 from Infineon Technologies, part of the MOSFETs. It is designed for 40V 100A 2mΩ@100A,10V 150W 4V@95uA 1PCSNChannel TO-252-3-313 MOSFETs ROHS. This product comes in a TO-252-3-313 package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 40V
  • Continuous Drain Current (Id): 100A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 2mΩ@100A,10V
  • Power Dissipation (Pd): 150W
  • Gate Threshold Voltage (Vgs(th)@Id): 4V@95uA
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): 9.43nF@25V
  • Total Gate Charge (Qg@Vgs): 118nC@10V
  • Operating Temperature: -55℃~+175℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.

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Full Specifications of IPD100N04S402ATMA1

Model NumberIPD100N04S402ATMA1
Model NameInfineon Technologies IPD100N04S402ATMA1
CategoryMOSFETs
BrandInfineon Technologies
Description40V 100A 2mΩ@100A,10V 150W 4V@95uA 1PCSNChannel TO-252-3-313 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:1.000 grams / 0.035274 oz
Package / CaseTO-252-3-313
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)40V
Continuous Drain Current (Id)100A
Drain Source On Resistance (RDS(on)@Vgs,Id)2mΩ@100A,10V
Power Dissipation (Pd)150W
Gate Threshold Voltage (Vgs(th)@Id)4V@95uA
Type1PCSNChannel
Input Capacitance (Ciss@Vds)9.43nF@25V
Total Gate Charge (Qg@Vgs)118nC@10V
Operating Temperature-55℃~+175℃@(Tj)

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