IPD18DP10LMATMA1 by Infineon Technologies – Specifications

Infineon Technologies IPD18DP10LMATMA1 is a IPD18DP10LMATMA1 from Infineon Technologies, part of the MOSFETs. It is designed for 100V 178mΩ@13A,10V [email protected] 1PCSPChannel TO-252-3 MOSFETs ROHS. This product comes in a TO-252-3 package and is sold as Tape & Reel (TR). Key features include:

• Drain Source Voltage (Vdss): 100V
• Continuous Drain Current (Id): 2.5A;13.9A
• Drain Source On Resistance (RDS(on)@Vgs,Id): 178mΩ@13A,10V
• Power Dissipation (Pd): 3W;83W
• Gate Threshold Voltage (Vgs(th)@Id): [email protected]
• Type: 1PCSPChannel
• Input Capacitance (Ciss@Vds): 2.1nF@50V
• Total Gate Charge (Qg@Vgs): 42nC@10V
• Operating Temperature: -55℃~+175℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.75 grams.