IPD200N15N3 G by Infineon Technologies – Specifications

Infineon Technologies IPD200N15N3 G is a IPD200N15N3 G from Infineon Technologies, part of the MOSFETs. It is designed for 150V 50A 150W 20mΩ@10V,50A 4V@90uA 1PCSNChannel TO-252-3 MOSFETs ROHS. This product comes in a TO-252-3 package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 150V
  • Continuous Drain Current (Id): 50A
  • Power Dissipation (Pd): 150W
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 20mΩ@10V,50A
  • Gate Threshold Voltage (Vgs(th)@Id): 4V@90uA
  • Type: 1PCSNChannel

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.353 grams.

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Full Specifications of IPD200N15N3 G

Model NumberIPD200N15N3 G
Model NameInfineon Technologies IPD200N15N3 G
CategoryMOSFETs
BrandInfineon Technologies
Description150V 50A 150W 20mΩ@10V,50A 4V@90uA 1PCSNChannel TO-252-3 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:0.353 grams / 0.012452 oz
Package / CaseTO-252-3
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)150V
Continuous Drain Current (Id)50A
Power Dissipation (Pd)150W
Drain Source On Resistance (RDS(on)@Vgs,Id)20mΩ@10V,50A
Gate Threshold Voltage (Vgs(th)@Id)4V@90uA
Type1PCSNChannel

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