IPD25DP06NMATMA1 by Infineon Technologies – Specifications

Infineon Technologies IPD25DP06NMATMA1 is a IPD25DP06NMATMA1 from Infineon Technologies, part of the MOSFETs. It is designed for 60V 6.5A 250mΩ@6.5A,10V 28W 4V@270uA 1PCSPChannel TO-252-3-313 MOSFETs ROHS. This product comes in a TO-252-3-313 package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 60V
  • Continuous Drain Current (Id): 6.5A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 250mΩ@6.5A,10V
  • Power Dissipation (Pd): 28W
  • Gate Threshold Voltage (Vgs(th)@Id): 4V@270uA
  • Type: 1PCSPChannel
  • Input Capacitance (Ciss@Vds): 420pF@30V
  • Total Gate Charge (Qg@Vgs): 10.6nC@10V
  • Operating Temperature: -55℃~+175℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.

Full Specifications of IPD25DP06NMATMA1

Model NumberIPD25DP06NMATMA1
Model NameInfineon Technologies IPD25DP06NMATMA1
CategoryMOSFETs
BrandInfineon Technologies
Description60V 6.5A 250mΩ@6.5A,10V 28W 4V@270uA 1PCSPChannel TO-252-3-313 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:1.000 grams / 0.035274 oz
Package / CaseTO-252-3-313
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)60V
Continuous Drain Current (Id)6.5A
Drain Source On Resistance (RDS(on)@Vgs,Id)250mΩ@6.5A,10V
Power Dissipation (Pd)28W
Gate Threshold Voltage (Vgs(th)@Id)4V@270uA
Type1PCSPChannel
Input Capacitance (Ciss@Vds)420pF@30V
Total Gate Charge (Qg@Vgs)10.6nC@10V
Operating Temperature-55℃~+175℃@(Tj)

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