IPD25N06S4L30ATMA2 by Infineon Technologies – Specifications

Infineon Technologies IPD25N06S4L30ATMA2 is a IPD25N06S4L30ATMA2 from Infineon Technologies, part of the MOSFETs. It is designed for 60V 25A 29W 30mΩ@25A,10V 2.2V@8uA 1PCSNChannel TO-252 MOSFETs ROHS. This product comes in a TO-252 package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 60V
  • Continuous Drain Current (Id): 25A
  • Power Dissipation (Pd): 29W
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 30mΩ@25A,10V
  • Gate Threshold Voltage (Vgs(th)@Id): 2.2V@8uA
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): 1.22nF@25V
  • Total Gate Charge (Qg@Vgs): 16.3nC@10V
  • Operating Temperature: -55℃~+175℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.8 grams.

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Full Specifications of IPD25N06S4L30ATMA2

Model NumberIPD25N06S4L30ATMA2
Model NameInfineon Technologies IPD25N06S4L30ATMA2
CategoryMOSFETs
BrandInfineon Technologies
Description60V 25A 29W 30mΩ@25A,10V 2.2V@8uA 1PCSNChannel TO-252 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:0.800 grams / 0.028219 oz
Package / CaseTO-252
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)60V
Continuous Drain Current (Id)25A
Power Dissipation (Pd)29W
Drain Source On Resistance (RDS(on)@Vgs,Id)30mΩ@25A,10V
Gate Threshold Voltage (Vgs(th)@Id)2.2V@8uA
Type1PCSNChannel
Input Capacitance (Ciss@Vds)1.22nF@25V
Total Gate Charge (Qg@Vgs)16.3nC@10V
Operating Temperature-55℃~+175℃@(Tj)

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