IPD30N03S2L-10 by Infineon Technologies – Specifications

Infineon Technologies IPD30N03S2L-10 is a IPD30N03S2L-10 from Infineon Technologies, part of the MOSFETs. It is designed for 30V 30A 100W 10mΩ@10V,30A 2V@50uA 1PCSNChannel TO-252-3 MOSFETs ROHS. This product comes in a TO-252-3 package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 30V
  • Continuous Drain Current (Id): 30A
  • Power Dissipation (Pd): 100W
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 10mΩ@10V,30A
  • Gate Threshold Voltage (Vgs(th)@Id): 2V@50uA
  • Type: 1PCSNChannel

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.

More on IPD30N03S2L-10

Full Specifications of IPD30N03S2L-10

Model NumberIPD30N03S2L-10
Model NameInfineon Technologies IPD30N03S2L-10
CategoryMOSFETs
BrandInfineon Technologies
Description30V 30A 100W 10mΩ@10V,30A 2V@50uA 1PCSNChannel TO-252-3 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:1.000 grams / 0.035274 oz
Package / CaseTO-252-3
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCN-
Drain Source Voltage (Vdss)30V
Continuous Drain Current (Id)30A
Power Dissipation (Pd)100W
Drain Source On Resistance (RDS(on)@Vgs,Id)10mΩ@10V,30A
Gate Threshold Voltage (Vgs(th)@Id)2V@50uA
Type1PCSNChannel

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