IPD30N03S4L09ATMA1 by Infineon Technologies – Specifications

Infineon Technologies IPD30N03S4L09ATMA1 is a IPD30N03S4L09ATMA1 from Infineon Technologies, part of the MOSFETs. It is designed for 30V 30A 9mΩ@30A,10V 42W 2.2V@13uA 1PCSNChannel TO-252 MOSFETs ROHS. This product comes in a TO-252 package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 30V
  • Continuous Drain Current (Id): 30A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 9mΩ@30A,10V
  • Power Dissipation (Pd): 42W
  • Gate Threshold Voltage (Vgs(th)@Id): 2.2V@13uA
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): 1.52nF@15V
  • Total Gate Charge (Qg@Vgs): 20nC@10V
  • Operating Temperature: -55℃~+175℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.5 grams.

More on IPD30N03S4L09ATMA1

Full Specifications of IPD30N03S4L09ATMA1

Model NumberIPD30N03S4L09ATMA1
Model NameInfineon Technologies IPD30N03S4L09ATMA1
CategoryMOSFETs
BrandInfineon Technologies
Description30V 30A 9mΩ@30A,10V 42W 2.2V@13uA 1PCSNChannel TO-252 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:0.500 grams / 0.017637 oz
Package / CaseTO-252
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)30V
Continuous Drain Current (Id)30A
Drain Source On Resistance (RDS(on)@Vgs,Id)9mΩ@30A,10V
Power Dissipation (Pd)42W
Gate Threshold Voltage (Vgs(th)@Id)2.2V@13uA
Type1PCSNChannel
Input Capacitance (Ciss@Vds)1.52nF@15V
Total Gate Charge (Qg@Vgs)20nC@10V
Operating Temperature-55℃~+175℃@(Tj)

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