IPD30N03S4L14ATMA1 by Infineon Technologies – Specifications

Infineon Technologies IPD30N03S4L14ATMA1 is a IPD30N03S4L14ATMA1 from Infineon Technologies, part of the MOSFETs. It is designed for 30V 30A 13.6mΩ@30A,10V 31W 2.2V@10uA 1PCSNChannel TO-252 MOSFETs ROHS. This product comes in a TO-252 package and is sold as Tape & Reel (TR). Key features include:

• Drain Source Voltage (Vdss): 30V
• Continuous Drain Current (Id): 30A
• Drain Source On Resistance (RDS(on)@Vgs,Id): 13.6mΩ@30A,10V
• Power Dissipation (Pd): 31W
• Gate Threshold Voltage (Vgs(th)@Id): 2.2V@10uA
• Type: 1PCSNChannel
• Input Capacitance (Ciss@Vds): 980pF@25V
• Total Gate Charge (Qg@Vgs): 14nC@10V
• Operating Temperature: -55℃~+175℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.8 grams.