IPD30N06S215ATMA2 by Infineon Technologies – Specifications

Infineon Technologies IPD30N06S215ATMA2 is a IPD30N06S215ATMA2 from Infineon Technologies, part of the MOSFETs. It is designed for 55V 30A 14.7mΩ@10V,30A 136W 4V@80uA 1PCSNChannel TO-252(DPAK) MOSFETs ROHS. This product comes in a TO-252(DPAK) package and is sold as Bag-packed. Key features include:

• Drain Source Voltage (Vdss): 55V
• Continuous Drain Current (Id): 30A
• Drain Source On Resistance (RDS(on)@Vgs,Id): 14.7mΩ@10V,30A
• Power Dissipation (Pd): 136W
• Gate Threshold Voltage (Vgs(th)@Id): 4V@80uA
• Type: 1PCSNChannel
• Input Capacitance (Ciss@Vds): 1.485nF@25V
• Total Gate Charge (Qg@Vgs): 110nC@10V
• Operating Temperature: -55℃~+175℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.481 grams.