IPD30N06S2L13ATMA1 by Infineon Technologies – Specifications

Infineon Technologies IPD30N06S2L13ATMA1 is a IPD30N06S2L13ATMA1 from Infineon Technologies, part of the MOSFETs. It is designed for 55V 30A 136W 13mΩ@30A,10V 2V@80uA 1PCSNChannel TO-252 MOSFETs ROHS. This product comes in a TO-252 package and is sold as Bag-packed. Key features include:

  • Drain Source Voltage (Vdss): 55V
  • Continuous Drain Current (Id): 30A
  • Power Dissipation (Pd): 136W
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 13mΩ@30A,10V
  • Gate Threshold Voltage (Vgs(th)@Id): 2V@80uA
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): 1.8nF@25V
  • Total Gate Charge (Qg@Vgs): 69nC@10V
  • Operating Temperature: -55℃~+175℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.

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Full Specifications of IPD30N06S2L13ATMA1

Model NumberIPD30N06S2L13ATMA1
Model NameInfineon Technologies IPD30N06S2L13ATMA1
CategoryMOSFETs
BrandInfineon Technologies
Description55V 30A 136W 13mΩ@30A,10V 2V@80uA 1PCSNChannel TO-252 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:1.000 grams / 0.035274 oz
Package / CaseTO-252
Package / ArrangeBag-packed
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)55V
Continuous Drain Current (Id)30A
Power Dissipation (Pd)136W
Drain Source On Resistance (RDS(on)@Vgs,Id)13mΩ@30A,10V
Gate Threshold Voltage (Vgs(th)@Id)2V@80uA
Type1PCSNChannel
Input Capacitance (Ciss@Vds)1.8nF@25V
Total Gate Charge (Qg@Vgs)69nC@10V
Operating Temperature-55℃~+175℃@(Tj)

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