IPD30N08S2L-21 by Infineon Technologies – Specifications

Infineon Technologies IPD30N08S2L-21 is a IPD30N08S2L-21 from Infineon Technologies, part of the MOSFETs. It is designed for 75V 30A 20.5mΩ@10V,25A 136W 2V@80uA 1PCSNChannel TO-252-3 MOSFETs ROHS. This product comes in a TO-252-3 package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 75V
  • Continuous Drain Current (Id): 30A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 20.5mΩ@10V,25A
  • Power Dissipation (Pd): 136W
  • Gate Threshold Voltage (Vgs(th)@Id): 2V@80uA
  • Type: 1PCSNChannel

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.

More on IPD30N08S2L-21

Full Specifications of IPD30N08S2L-21

Model NumberIPD30N08S2L-21
Model NameInfineon Technologies IPD30N08S2L-21
CategoryMOSFETs
BrandInfineon Technologies
Description75V 30A 20.5mΩ@10V,25A 136W 2V@80uA 1PCSNChannel TO-252-3 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:1.000 grams / 0.035274 oz
Package / CaseTO-252-3
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCN-
Drain Source Voltage (Vdss)75V
Continuous Drain Current (Id)30A
Drain Source On Resistance (RDS(on)@Vgs,Id)20.5mΩ@10V,25A
Power Dissipation (Pd)136W
Gate Threshold Voltage (Vgs(th)@Id)2V@80uA
Type1PCSNChannel

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