IPD40DP06NM by Infineon Technologies – Specifications

Infineon Technologies IPD40DP06NM is a IPD40DP06NM from Infineon Technologies, part of the MOSFETs. It is designed for 60V 4.3A 19W 400mΩ@10V,4.3A 4V@166uA 1PCSPChannel TO-252-3 MOSFETs ROHS. This product comes in a TO-252-3 package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 60V
  • Continuous Drain Current (Id): 4.3A
  • Power Dissipation (Pd): 19W
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 400mΩ@10V,4.3A
  • Gate Threshold Voltage (Vgs(th)@Id): 4V@166uA
  • Type: 1PCSPChannel

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.

More on IPD40DP06NM

Full Specifications of IPD40DP06NM

Model NumberIPD40DP06NM
Model NameInfineon Technologies IPD40DP06NM
CategoryMOSFETs
BrandInfineon Technologies
Description60V 4.3A 19W 400mΩ@10V,4.3A 4V@166uA 1PCSPChannel TO-252-3 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:1.000 grams / 0.035274 oz
Package / CaseTO-252-3
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCN-
Drain Source Voltage (Vdss)60V
Continuous Drain Current (Id)4.3A
Power Dissipation (Pd)19W
Drain Source On Resistance (RDS(on)@Vgs,Id)400mΩ@10V,4.3A
Gate Threshold Voltage (Vgs(th)@Id)4V@166uA
Type1PCSPChannel

Compare Infineon Technologies - IPD40DP06NM With Other 200 Models

Related Models - IPD40DP06NM Alternative

Scroll to Top