Infineon Technologies IPD40DP06NMATMA1 is a IPD40DP06NMATMA1 from Infineon Technologies, part of the MOSFETs. It is designed for 60V 4.3A 400mΩ@4.3A,10V 19W 4V@166uA 1PCSPChannel TO-252-3-313 MOSFETs ROHS. This product comes in a TO-252-3-313 package and is sold as Tape & Reel (TR). Key features include:
- Drain Source Voltage (Vdss): 60V
- Continuous Drain Current (Id): 4.3A
- Drain Source On Resistance (RDS(on)@Vgs,Id): 400mΩ@4.3A,10V
- Power Dissipation (Pd): 19W
- Gate Threshold Voltage (Vgs(th)@Id): 4V@166uA
- Type: 1PCSPChannel
- Input Capacitance (Ciss@Vds): 260pF@30V
- Total Gate Charge (Qg@Vgs): 6.7nC@10V
- Operating Temperature: -55℃~+175℃@(Tj)
Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.6 grams.
More on IPD40DP06NMATMA1
Full Specifications of IPD40DP06NMATMA1
Model Number | IPD40DP06NMATMA1 |
Model Name | Infineon Technologies IPD40DP06NMATMA1 |
Category | MOSFETs |
Brand | Infineon Technologies |
Description | 60V 4.3A 400mΩ@4.3A,10V 19W 4V@166uA 1PCSPChannel TO-252-3-313 MOSFETs ROHS |
RoHS | Lead free / RoHS Compliant |
Unit | Piece |
Weight: | 0.600 grams / 0.021164 oz |
Package / Case | TO-252-3-313 |
Package / Arrange | Tape & Reel (TR) |
Battery | No |
ECCN | EAR99 |
Drain Source Voltage (Vdss) | 60V |
Continuous Drain Current (Id) | 4.3A |
Drain Source On Resistance (RDS(on)@Vgs,Id) | 400mΩ@4.3A,10V |
Power Dissipation (Pd) | 19W |
Gate Threshold Voltage (Vgs(th)@Id) | 4V@166uA |
Type | 1PCSPChannel |
Input Capacitance (Ciss@Vds) | 260pF@30V |
Total Gate Charge (Qg@Vgs) | 6.7nC@10V |
Operating Temperature | -55℃~+175℃@(Tj) |
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