IPD50N03S207ATMA1 by Infineon Technologies – Specifications

Infineon Technologies IPD50N03S207ATMA1 is a IPD50N03S207ATMA1 from Infineon Technologies, part of the MOSFETs. It is designed for 30V 50A 136W 7.3mΩ@50A,10V 4V@85uA 1PCSNChannel TO-252 MOSFETs ROHS. This product comes in a TO-252 package and is sold as Tape & Reel (TR). Key features include:

• Drain Source Voltage (Vdss): 30V
• Continuous Drain Current (Id): 50A
• Power Dissipation (Pd): 136W
• Drain Source On Resistance (RDS(on)@Vgs,Id): 7.3mΩ@50A,10V
• Gate Threshold Voltage (Vgs(th)@Id): 4V@85uA
• Type: 1PCSNChannel
• Input Capacitance (Ciss@Vds): 2nF@25V
• Total Gate Charge (Qg@Vgs): 68nC@10V
• Operating Temperature: -55℃~+175℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.