IPD50N04S408ATMA1 by Infineon Technologies – Specifications

Infineon Technologies IPD50N04S408ATMA1 is a IPD50N04S408ATMA1 from Infineon Technologies, part of the MOSFETs. It is designed for 40V 50A 7.9mΩ@50A,10V 46W 4V@17uA 1PCSNChannel TO-252-3-313 MOSFETs ROHS. This product comes in a TO-252-3-313 package and is sold as Tape & Reel (TR). Key features include:

• Drain Source Voltage (Vdss): 40V
• Continuous Drain Current (Id): 50A
• Drain Source On Resistance (RDS(on)@Vgs,Id): 7.9mΩ@50A,10V
• Power Dissipation (Pd): 46W
• Gate Threshold Voltage (Vgs(th)@Id): 4V@17uA
• Type: 1PCSNChannel
• Input Capacitance (Ciss@Vds): 1.78nF@6V
• Total Gate Charge (Qg@Vgs): 22.4nC@10V
• Operating Temperature: -55℃~+175℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.6 grams.